TY - CHAP A1 - Jun-Sik Yoon A2 - Jinsu Jeong A3 - Seunghwan Lee A4 - Junjong Lee A5 - Rock-Hyun Baek ED1 - Xihong Peng Y1 - 2021-07-14 PY - 2021 T1 - Gate-All-Around FETs: Nanowire and Nanosheet Structure N2 - Low-dimensional structures have attracted extensive research interest due to their promising applications in nanotechnology. These low-dimensional materials have the potential to make revolutionary changes in science and technology because a reduction in size not only enables a faster speed and greater computing power but also helps reduce device form factors. As such, this book examines the behaviors of oxide nanowires, group III–V compounds, and other nanowires, including basic Si nanowires, metallic wires, and complex geometrical nanowires. BT - Nanowires SP - Ch. 9 UR - https://doi.org/10.5772/intechopen.94060 DO - 10.5772/intechopen.94060 SN - 978-1-83962-392-9 PB - IntechOpen CY - Rijeka Y2 - 2022-01-24 ER -