TY - CHAP A1 - Neophytos Lophitis A2 - Anastasios Arvanitopoulos A3 - Samuel Perkins and Marina Antoniou ED1 - Yogesh Kumar Sharma Y1 - 2018-09-12 PY - 2018 T1 - TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors N2 - SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices. BT - Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications SP - Ch. 2 UR - https://doi.org/10.5772/intechopen.76062 DO - 10.5772/intechopen.76062 SN - 978-1-78923-669-9 PB - IntechOpen CY - Rijeka Y2 - 2022-05-19 ER -