TY - CHAP A1 - Dian Lei A2 - Xiao Gong ED1 - Dhanasekaran Vikraman ED2 - Hyun-Seok Kim Y1 - 2018-07-18 PY - 2018 T1 - Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality N2 - In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics. BT - Design, Simulation and Construction of Field Effect Transistors SP - Ch. 6 UR - https://doi.org/10.5772/intechopen.74532 DO - 10.5772/intechopen.74532 SN - 978-1-78923-417-6 PB - IntechOpen CY - Rijeka Y2 - 2021-01-23 ER -