TY - CHAP A1 - T. S. Argunova A2 - M. Yu. Gutkin A3 - J. H. Je A4 - V. G. Kohn A5 - E. N. Mokhov ED1 - Yasuto Hijikata Y1 - 2012-10-16 PY - 2012 T1 - Characterization of Defects Evolution in Bulk SiC by Synchrotron X-Ray Imaging N2 - Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness. BT - Physics and Technology of Silicon Carbide Devices SP - Ch. 2 UR - https://doi.org/10.5772/52058 DO - 10.5772/52058 SN - PB - IntechOpen CY - Rijeka Y2 - 2020-08-10 ER -