TY - CHAP A1 - Katharina Lorenz A2 - Elke Wendler ED1 - Mark Goorsky Y1 - 2012-05-30 PY - 2012 T1 - Implantation Damage Formation in GaN and ZnO N2 - Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book. BT - Ion Implantation SP - Ch. 11 UR - https://doi.org/10.5772/34751 DO - 10.5772/34751 SN - PB - IntechOpen CY - Rijeka Y2 - 2021-11-27 ER -