TY - CHAP A1 - Halyna Khlyap A2 - Viktor Laptev A3 - Luydmila Pankiv A4 - Volodymyr Tsmots ED1 - Sukumar Basu Y1 - 2011-07-27 PY - 2011 T1 - Effect of Native Oxide on the Electric Field-induced Characteristics of Device-quality Silicon at Room Temperature N2 - The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices. BT - Crystalline Silicon SP - Ch. 3 UR - https://doi.org/10.5772/22481 DO - 10.5772/22481 SN - PB - IntechOpen CY - Rijeka Y2 - 2019-11-14 ER -