TY - CHAP A1 - Moumita Mukherjee ED1 - Rosario Gerhardt Y1 - 2011-04-04 PY - 2011 T1 - Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics N2 - In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase. BT - Properties and Applications of Silicon Carbide SP - Ch. 7 UR - https://doi.org/10.5772/15537 DO - 10.5772/15537 SN - PB - IntechOpen CY - Rijeka Y2 - 2021-09-27 ER -